OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES.

Autor:	Abdullayev, J. SH., Sapaev, I. B.
Zdroj:	Eurasian Physical Technical Journal; 2024, Vol. 21 Issue 3, p21-28, 8p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu