| Autor: |
Podryga, V. O., Polyakov, S. V., Tarasov, N. I., Usachev, V. A. |
| Zdroj: |
Lobachevskii Journal of Mathematics; Jul2024, Vol. 45 Issue 7, p3138-3147, 10p |
| Abstrakt: |
Problem of modeling the interaction of metal nanoclusters in very large-scale integrated circuits (VLSIC) interconnects is considered in the context of improving manufacturing technologies for promising microelectronics instruments and devices. This problem is relevant when analyzing the performance and durability of VLSIC, the main components of which are obtained using epitaxy, sputtering and lithography methods. At the current stage of development, a feature of such technologies is the transition of the VLSIC element base to the nanometer range, which significantly increases the quality requirements for all their components.The work presents a supercomputer technology for atomistic modeling, which is proposed to be applied to the numerical analysis of the degradation problem for ultra-thin interconnects of VLSIC elements. It includes the construction of a mathematical model, its parallel numerical implementation and test calculations. The result of the work is a numerical analysis of the interaction processes between copper and tantalum nanoclusters, which are typical components of interconnects. The data obtained as a result of the analysis are consistent with theoretical ideas about the processes occurring in such microsystems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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