| Autor: |
Chernyak, Leonid, Schulte, Alfons, Li, Jian-Sian, Chiang, Chao-Ching, Ren, Fan, Pearton, Stephen J., Sartel, Corinne, Sallet, Vincent, Chi, Zeyu, Dumont, Yves, Chikoidze, Ekaterine, Ruzin, Arie |
| Předmět: |
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| Zdroj: |
AIP Advances; Aug2024, Vol. 14 Issue 8, p1-5, 5p |
| Abstrakt: |
It has recently been demonstrated that electron beam injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length with injection duration, followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) at meta-stable native defect levels in the material, which in turn blocks recombination through these levels. In this work, in contrast to previous studies, the effect of electron injection in p-type Ga2O3 was investigated using cathodoluminescence technique in situ in scanning electron microscope, thus providing insight into minority carrier lifetime behavior under electron beam irradiation. The activation energy of ∼0.3 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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