| Autor: |
Weger, M., Kuegler, J., Nelhiebel, M., Moser, M., Bockstedte, M., Pobegen, G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/21/2024, Vol. 136 Issue 3, p1-13, 13p |
| Abstrakt: |
4H-SiC/ SiO 2 interface states play a major role in the performance and reliability of modern 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs). To gain new insights into these interface states, we developed a cryogenic measurement technique that uses photon-assisted electron depopulation to probe device performance limiting 4H-SiC/ SiO 2 interface states. This technique enables the characterization of shallow as well as deep states at the 4H-SiC/ SiO 2 interface of fully processed devices using a cryogenic probe station. Our method is performed on n-channel 4H-SiC MOSFET test structures with deposited oxide and postoxidation anneal. We identify conditions under which the electrons remain trapped at 4H-SiC/ SiO 2 interface states and trigger the controlled photon-assisted electron depopulation within a range of photon energies. This allows us to prove the presence of near interface traps, which have previously been found in thermally grown 4H-SiC MOS structures. Our results are supported by device simulations. Additionally, we study the impact of irradiation intensity and light exposure time on the photon-induced processes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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