| Autor: |
Novikov, Yu. N., Gritsenko, V. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/7/2024, Vol. 136 Issue 1, p1-6, 6p |
| Abstrakt: |
The spectrum of localized hole states (traps) in amorphous silicon nitride, a-Si3N4, is experimentally studied using the method of thermally stimulated depolarization. The experiment is compared with theoretical calculations using three models of the energy spectrum of traps: discrete spectrum (monoenergetic trap), continuous spectrum, and Gaussian trap distribution. The experiment is quantitatively described by a model of a discrete spectrum of traps with an energy of 1.15 eV and a width of no more than 0.01 eV. In the case of a continuous and Gaussian spectrum of traps, the contribution to depolarization is made by the deepest traps. The blurring of the trap energy level in a-Si3N4 due to the absence of long-range order (fluctuations in the Si–N bond length and fluctuations in the N–Si–N and Si–N–Si angles) does not exceed 0.01 eV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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