| Abstrakt: |
Interface modification is a promising technique for enhancing electrical parameters of Organic Field Effect Transistor (OFETs). In OFETs, self-assembled monolayer molecules are widely used for treatment dielectric/semiconductor interface layer. Modification of dielectric/semiconductor layer with SAM molecules ensures a variety of potential applications. Boronic acids with four different alkyl chain lengths (Cn-BA; n = 8, 10, 12, 14) molecules were used in this study to treat the Al2O3 dielectric surface in dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) based OFETs. Treated with SAMs improve the mobility of Al2O3 surfaces for linear and saturation regime and threshold voltages shifted from positive direction. The morphological and electrical characterizations were performed for fabricated OFET. The results show that alkyl-boronic acids SAM molecules open a new perspective for further optoelectronic applications due to its application for oxide surfaces and controllability. [ABSTRACT FROM AUTHOR] |
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