| Autor: |
Zhu, Ziye, Hu, Jiaming, Yao, Xiaoping, Zhao, Shu |
| Zdroj: |
Journal of Materials Chemistry C; 4/28/2024, Vol. 12 Issue 16, p5951-5957, 7p |
| Abstrakt: |
Exotic dipole orders and topological domain structures in ferroelectrics are intriguing both for fundamental physics and device applications. Herein, based on DFT calculations, Monte Carlo and phase-field modeling, we reveal that appropriate strain engineering can enable a ferroelectric transition in high-mobility semiconductor bismuth oxyselenide Bi2O2Se throughout the entire 3D space. Furthermore, we explore the ferroelectric properties of Bi2O2Se under different strain conditions. Uniaxial strain induces a typical double degenerate ferroelectric state, while biaxially strained Bi2O2Se holds unusual quadruple-well dipole orders and a "two-step" 90° ferroelectric switching. These ferroelectric phase transitions are temperature-limited. More importantly, various types of spontaneous topological domain structures in biaxially strained ferroelectric Bi2O2Se are demonstrated, including vortex and anti-vortex patterns. Our work is expected to enrich the understanding of ferroelectric effects in Bi2O2Se, which is essential for practical application of ferroelectrics in next-generation high-performance functional electronic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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