| Autor: |
Hyoun Kim, Ju Myung, Nam Kim, Chung-Gon Yoo, Kee Suh, Sung Kim, Dae-Kyu Choi, Chin-Wook Chung, Chang-Jin Kang, Wan Park, Se-Geun Park, Jae-Gab Lee |
| Předmět: |
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| Zdroj: |
Journal of Materials Science; Jul2005, Vol. 40 Issue 13, p3543-3544, 2p |
| Abstrakt: |
This paper reports the characteristics of the photoresist (PR) ashing process using N2Ar plasma. As ultralarge-scale integrated (ULSI) circuits are reduced in size to deeper submicron dimension, signal propagation delay, crosstalk, and power consumption are greatly increased due to parasitic capacitance Accordingly, in order to improve the performance of ULSI devices, there is a strong demand for low-k intermetal dielectric materials instead of SiO2 that has been conventionally used. However, in the process of moving toward the low-k materials scheme, manufacturers have identified new integration challenges. One significant challenge involves PR ashing process which normally uses the O2 plasma. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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