| Autor: |
Lundin, V. V., Rodin, S. N., Sakharov, A. V., Tsatsulnikov, A. F., Lobanova, A. V., Bogdanov, M. V., Talalaev, R. A., Sun, Haiding, Long, Shibing |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; 2023 Suppl 4, Vol. 49, pS211-S214, 4p |
| Abstrakt: |
Study of Ga2O3 deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga2O3 deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550–700°C, that is 150°C higher, then for GaN deposition in the same reactor. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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