Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots.

Autor: Kryzhanovskaya, N. V., Blokhin, S. A., Makhov, I. S., Moiseev, E. I., Nadtochiy, A. M., Fominykh, N. A., Mintairov, S. A., Kaluyzhnyy, N. A., Guseva, Yu. A., Kulagina, M. M., Zubov, F. I., Kolodeznyi, E. S., Maximov, M. V., Zhukov, A. E.
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Zdroj: Semiconductors; Dec2023, Vol. 57 Issue 13, p594-598, 5p
Abstrakt: The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 μm and a length of the absorbing region from 92 μm to 400 μm. A low dark current density (1.1 and 22 μA/cm2 at –1 and –20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC-circuit, were obtained. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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