| Autor: |
Moreno, Yerai, Egea, Aritz, Almandoz, Gaizka, Ugalde, Gaizka, Urdangarin, Ander, Moreno, Roberto |
| Předmět: |
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| Zdroj: |
Electronics (2079-9292); Feb2024, Vol. 13 Issue 4, p787, 17p |
| Abstrakt: |
The trend towards electrification in mobility has led to the increased use of silicon carbide (SiC) semiconductors. These semiconductors are more efficient but also present challenges related to electromagnetic interference (EMI) due to their higher voltage derivatives. This paper introduces a new high-frequency impedance model for electrical machines. The proposed model distinguishes itself from existing approaches by being entirely derived from Finite Element Method (FEM) simulations, which include capacitances in the magnetic simulation. This approach achieves a balance between computational efficiency and high accuracy across the entire frequency spectrum, ranging from 100 Hz to 50 MHz. The model provides valuable insights during the design phase and was rigorously validated using data from 28 samples of an industrial machine. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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