| Autor: |
Pot, C., Holmes-Hewett, W. F., Anton, E.-M., Miller, J. D., Ruck, B. J., Trodahl, H. J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/13/2023, Vol. 123 Issue 20, p1-5, 5p |
| Abstrakt: |
We demonstrate a nonvolatile cryogenic magnetic memory element needed to support emerging superconducting- and quantum-computing technologies. The central element is a switchable tri-layer thin film magnetic dot comprising two semiconducting ferromagnetic GdxSm1−xN layers separated by an exchange-blocking Al layer. The materials are explored for their tunable magnetic responses, the potential to engineer compensating magnetic moments in the anti-parallel tri-layers. The stability of the parallel and anti-parallel states and the reproducibility over repeated cycles are also demonstrated. We show that the tri-layer stacks can be formed into dots as small as 4 μm diameter, without affecting their magnetic behavior. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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