| Autor: |
Wang, Kaiyi, Chai, Ye, Gao, Hui, Zhu, Guohua, Hao, Shijie, Zhou, Hongyi, Hao, Yulong, Gao, Weiqi, Zhao, Zhongkun, Sun, Hongtao, Hao, Guolin |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/28/2023, Vol. 134 Issue 12, p1-7, 7p |
| Abstrakt: |
γ-GeSe has recently emerged as a promising material for electronics and optoelectronics due to its unique band structure and excellent electrical properties. However, controllable growth of γ-GeSe remains a significant challenge. In this work, the controllable growth of γ-GeSe microflakes (MFs) on a mica substrate was reported by vapor phase deposition via a rapid cooling strategy. The screw dislocation-driven growth behavior is confirmed based on systematic characterizations. Our experimental results demonstrate that the stress induced during the rapid cooling process is critical for the controllable synthesis of γ-GeSe MFs and corresponding growth mechanism was proposed. Our work provides a new experimental strategy for the controlled growth of γ-GeSe MFs, which is beneficial for constructing GeSe-based nanoelectronic and optoelectronic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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