Electronic Transport in a Gapless HgCdTe Crystals.

Autor: Vasilyev, Yu. B., Usikova, A. A., Mikhailov, N. N.
Zdroj: Bulletin of the Russian Academy of Sciences: Physics; Jun2023, Vol. 87 Issue 6, p845-848, 4p
Abstrakt: The results of a study of the magnetoresistance of a three-dimensional Hg0.85Cd0.15Te in a wide range of temperatures and magnetic fields are presented. The magnetoresistance increases linearly with the magnetic field at all temperatures, with the largest value exceeding 1 000 000% in fields above 11 T and at a temperature of 75 K. In the absence of a magnetic field, the resistivity has a minimum value corresponding to an extremely high mobility, which is explained by the temperature transition from normal to inverted band structure and the formation of a gapless band structure with linear dispersion at 75 K. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index