| Autor: |
Mishra, Sushma, Witkowski, Bartlomiej S., Jakiela, Rafal, Khosravizadeh, Zeinab, Paszkowicz, Wojciech, Sulich, Adrian, Volnianska, Oksana, Wozniak, Wojciech, Guziewicz, Elzbieta |
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| Zdroj: |
Physica Status Solidi. A: Applications & Materials Science; May2023, Vol. 220 Issue 10, p1-11, 11p |
| Abstrakt: |
A worldwide effort is under way to understand the activation of acceptor states in ZnO with the motivation to achieve persistent p-type conductivity. In this study, cathodoluminescent (CL) imaging, electron microscopy (SEM), secondary-ions mass spectrometry (SIMS), and X-ray diffraction (XRD) are used to compare ZnO:N films subjected to a rapid thermal annealing process (RTP) in N2 and O2 atmosphere at 400--900 °C. The study, performed for ZnO:N films with nitrogen concentration of 2 x 1018 at cm-3 grown under O-rich conditions is directed to establish the optimal atmosphere and temperature at which acceptor-related CL is enhanced and correlated with structural properties. XRD shows that crystallite size increases from ≈100 to ≈250 nm with increasing annealing temperature up to 800 °C. The low-temperature (LT) CL maps reveal that the acceptor- and donorrelated CL mostly derives from different crystallites. Both annealing medium and temperature influence acceptor-related CL intensity, which is higher under oxygen annealing. It is observed that the intensity of acceptor-related CL increases with annealing temperature up to 800 °C and then decreases. Noticeable donor-related emission appears only after RTP at 700 °C and becomes prominent for RTP at 900 °C [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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