| Autor: |
Rawat, Kusum, Jha, Kaushal, Shishodia, Gayatri, Shishodia, P. K. |
| Zdroj: |
Journal of Materials Science: Materials in Electronics; Jun2023, Vol. 34 Issue 17, p1-13, 13p |
| Abstrakt: |
The undoped and bismuth-doped Cu2ZnSnS4 (CZTS) thin films were fabricated by an inexpensive sol–gel spin-coating method followed by the sulfurization process. The aim of this work is to study the role of bismuth incorporation on the structural, optical, and electrical properties of CZTS films. The films exhibit polycrystalline nature in kesterite structure along (112) plane with improved crystallite size. The A1 mode of CZTS films was found to be red shifted in the Raman spectra. The study between physical properties and surface morphology of films was evaluated using AFM-based power spectral density analysis. The optical studies revealed the decrease in bandgap energy of CZTS film from 1.55 to 1.24 eV with increasing doping concentration. The Hall measurement confirmed the p-type nature of films and mobility significantly enhanced for the doped films. The increase in photosensitivity response of the bismuth-doped CZTS films suggests their suitable application as absorber layer in the solar cell. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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