| Autor: |
Roy, S., Tripathy, N., Pradhan, D., Sahu, P. K., Kar, J. P. |
| Předmět: |
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| Zdroj: |
Journal of Electronic Materials; Jun2023, Vol. 52 Issue 6, p4239-4246, 8p |
| Abstrakt: |
Titanium dioxide (TiO2) and zinc oxide (ZnO) multilayer thin films were deposited on p-type silicon substrate using a sol–gel-based dip coating technique. The morphological and structural properties of multilayers were investigated prior to the study of electrical properties. Field emission scanning electron microscopy (FESEM) studies showed films with uniform distributions of grains. The presence of crystalline phases of TiO2 and ZnO has been observed from x-ray diffraction (XRD) studies. XRD and Raman peaks confirmed the deposition of multilayers of TiO2 and ZnO thin films. The oxide charge density (Qox) was found to be a maximum of 2.88 × 1012 cm−2 for TiO2-TiO2-ZnO-TiO2 multilayer thin film and the corresponding interface trap density (Dit) was calculated as 1.73 × 1012 eV−1 cm−2. The resistive switching performance of multilayer thin films has been significantly improved in comparison to the individual ZnO and TiO2 thin film. TiO2-ZnO-TiO2-TiO2 multilayer structure has shown better memory window with an on/off ratio of 1.45 × 104. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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