| Autor: |
Jin, Xiaowei, Schneider, Reinhard, Popescu, Radian, Seeger, Jasmin, Grutke, Jonas, Zerulla, Benedikt, Hetterich, Michael, Hariskos, Dimitrios, Witte, Wolfram, Powalla, Michael, Gerthsen, Dagmar |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/28/2023, Vol. 133 Issue 16, p1-8, 8p |
| Abstrakt: |
Thin-film solar cells with Cu(In,Ga)Se2 (CIGS) absorber layers have been intensively studied due to their high power conversion efficiencies. CIGS solar cells with Zn(O,S) buffer layers achieved record efficiencies due to their reduced parasitic absorption compared with the more commonly used CdS buffer. Accordingly, we have studied solution-grown Zn(O,S) buffer layers on polycrystalline CIGS absorber layers by complementary techniques. A bandgap energy Eg of 2.9 eV is detected by means of angle-resolved electroreflectance spectroscopy corresponding to Zn(O,S), whereas an additional Eg of 2.3 eV clearly appeared for a post-annealed CIGS solar cell (250 °C in air) compared with the as-grown state. To identify the chemical phase that contributes to the Eg of 2.3 eV, the microstructure and microchemistry of the Zn(O,S) buffer layers in the as-grown state and after annealing were analyzed by different transmission electron microscopic techniques on the submicrometer scale and energy-dispersive x-ray spectroscopy. We demonstrate that the combination of these methods facilitates a comprehensive analysis of the complex phase constitution of nanoscaled buffer layers. The results show that after annealing, the Cu concentration in Zn(O,S) is increased. This observation indicates the existence of an additional Cu-containing phase with Eg close to 2.3 eV, such as Cu2Se (2.23 eV) or CuS (2.36 eV), which could be one possible origin of the low power conversion efficiency and low fill factor of the solar cell under investigation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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