Spectral Control of the Process of Copper Etching in Radio Frequency Dichlorodifluoromethane Plasma.

Autor:	Murin, D. B., Pivovarenok, S. A., Dunaev, A. V., Chesnokov, I. A., Gogulev, I. A.
Předmět:	PLASMA frequencies HIGH-frequency discharges ETCHING PLASMA flow RADIO frequency COPPER ELECTROMAGNETIC spectrum SILICON nanowires
Zdroj:	Russian Microelectronics; Dec2022, Vol. 51 Issue 6, p359-367, 9p
Abstrakt:	The radiation spectra of the RF discharge plasma of dichlorodifluoromethane during copper etching are obtained and analyzed. It is shown that radiation of the RF discharge plasma is represented by atomic and molecular components and it is assumed that the dependences of the intensities of the lines and bands on the external discharge conditions are determined by the excitation of the emissive states on direct electron impact. Moreover, their behavior agrees with the character of the dependences of the etching rate under the same conditions. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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