| Autor: |
Wang, Xuejing, Lin, Yung-Chen, Tai, Chia-Tse, Lee, Seok Woo, Lu, Tzu-Ming, Shin, Sun Hae Ra, Addamane, Sadhvikas J., Sheehan, Chris, Li, Jiun-Yun, Kim, Yerim, Yoo, Jinkyoung |
| Předmět: |
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| Zdroj: |
APL Materials; 11/1/2022, Vol. 10 Issue 11, p1-7, 7p |
| Abstrakt: |
Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage (Id–Vg) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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