| Autor: |
ZHANG Tian, SONG Mingxuan, FENG Yuan, HE Fengyou |
| Předmět: |
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| Zdroj: |
Electric Drive; 2022, Vol. 52 Issue 21, p3-7, 5p |
| Abstrakt: |
Aiming at the series short-circuit phenomenon caused by device breakdown and control failure, based on the half-bridge structure, the different series short-circuit dynamic sharing voltage characteristics of SiC MOSFET and Si IGBT were analyzed. At the same time, the principle of series short-circuit voltage sharing was analyzed combining with the changes of voltage and current during switching, and the voltage sharing path of the device was marked on the output characteristic curves. Experimental results show that the external driving parameters such as driving voltage, load current and bus voltage have different effects on the voltage sharing characteristics of the two devices on series short-circuit. The reverse load current changes the series short-circuit voltage sharing trend and most obviously effects the characteristics of series short-circuit. Fully understanding the series short-circuit mechanism is critical to improve the short-circuit protection strategies. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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