| Autor: |
Huang, L., Li, C. F., Tang, Y. S., Lin, L., Zhai, W. J., Cui, X. M., Zhou, G. Z., Zhang, J. H., Yan, Z. B., Chen, C., Jiang, X. P., Lu, C. L., Liu, J.-M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/28/2022, Vol. 132 Issue 16, p1-7, 7p |
| Abstrakt: |
Antiferromagnetic spintronics has been receiving attention recently, while spin-texture dependent magnetoresistance (MR) represents one of the main mechanisms for magnetic data storage. In particular, sufficiently large MR with high operating temperatures would be highly required for advanced spintronic applications. In this work, we experimentally investigate the MR effect of well-known antiferromagnet α-Fe2O3 (hematite) in a single crystal form, which has the Morin transition temperature as high as Tm ∼ 260 K. It is revealed that the MR effect associated with the spin-texture re-alignment, i.e., the spin-flop from the out-of-plane direction (c axis) to the in-plane direction, driven by sufficiently low magnetic fields inclined along the [012] direction, reaches up to ∼2.5% at temperature T ∼ 250 K. The first-principles calculations suggest that this MR effect originates from the reduced bandgap due to the spin-flop and the finite spin–orbital coupling. The present work sheds light on the possibility of α-Fe2O3 as a favored MR-based candidate for near-room temperature spintronics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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