Tl-concentration dependence of photoluminescence and scintillation properties in Tl-doped RbI single crystals.

Autor: Miyazaki, Keiichiro, Nakauchi, Daisuke, Kato, Takumi, Kawaguchi, Noriaki, Yanagida, Takayuki
Předmět:
Zdroj: Journal of Materials Science: Materials in Electronics; Oct2022, Vol. 33 Issue 28, p22162-22168, 7p
Abstrakt: Photoluminescence and scintillation properties of RbI single crystals with various Tl-concentrations (0.1%, 0.3%, 1%, and 3%) were investigated. Under an excitation at ~ 300 nm, all the samples exhibit an emission peak at ~ 420 nm. This emission peak is due to 3P11S0 transitions of Tl+ ions. Under X-ray excitation, all the samples exhibit a broad peak (~ 420 nm) and a shoulder like structure (~ 500 nm) due to Tl+ ions. According to pulse height spectra under 137Cs γ-ray irradiation, the 0.3% Tl-doped sample shows the highest light yield of 7300 ph/MeV among the samples. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index