Positive Shifting of Vth with Enhanced DC Performance in AlGaN/GaN Schottky-Gate HEMT through Optimized UV/O3 Treated GateInterface and Thermal Engineering.
Autor: | Soumen Maumder, Zhan-Gao Wu, Yeong-Her Wang |
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Zdroj: | ECS Journal of Solid State Science & Technology; Jun2022, Vol. 11 Issue 6, p299-305, 7p |
Databáze: | Complementary Index |
Externí odkaz: |