Positive Shifting of Vth with Enhanced DC Performance in AlGaN/GaN Schottky-Gate HEMT through Optimized UV/O3 Treated GateInterface and Thermal Engineering.

Autor: Soumen Maumder, Zhan-Gao Wu, Yeong-Her Wang
Zdroj: ECS Journal of Solid State Science & Technology; Jun2022, Vol. 11 Issue 6, p299-305, 7p
Databáze: Complementary Index