| Autor: |
Meriuts, A. V., Kharchenko, M. M., Khrypunov, G. S., Pudov, A. O., Makhlai, V. A., Herashchenko, S. S., Sokolov, S. A., Rybka, A. V., Kutny, V. E., Kolodiy, I. V., Dobrozhan, A. I., Kosinov, A. V., Khrypunov, M. G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/14/2022, Vol. 132 Issue 10, p1-9, 9p |
| Abstrakt: |
In this work, the ability of CdTe/CdS thin-film device structures prepared by the hot-wall method to detect ionizing radiation was investigated. The samples were fabricated with a structure typical of CdTe/CdS-based solar cells and exhibit radiation sensitivity even without the application of an external voltage. This allows such structures to be used as low-voltage radiation sensors. An investigation of the radiation resistance of the structures, namely, the effect of irradiation with high-intensity hydrogen plasma H2+ on the crystal structure and performance, was carried out. It was shown that the device structures remained operational after two plasma pulses at an ion density of 2 × 1023 m−2 and an energy density of up to 0.2 MJ/m2. With further exposure to plasma, the device structures deteriorated, first, due to gradual sputtering off of the back contact, and, second, as a result of diffusion processes that occurred when the structures were heated to high temperatures, due to which the entire volume of the CdTe base layer got converted into a CdSxTe1−x solid solution. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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