Formation of Nanosized Structures on the Silicon Surface by a Combination of Focused Ion Beam Methods and Plasma-Chemical Etching.

Autor:	Klimin, V. S., Morozova, Yu. V., Kots, I. N., Vakulov, Z. E., Ageev, O. A.
Předmět:	SILICON surfaces ION beams FOCUSED ion beams SURFACE structure ETCHING SILICON wafers SURFACE interactions
Zdroj:	Russian Microelectronics; Aug2022, Vol. 51 Issue 4, p236-242, 7p
Abstrakt:	The aim of this paper is to study the modes and determine the patterns of plasma-chemical processing in a fluoride plasma of a silicon surface locally modified with gallium ions. Experimental and theoretical studies of the interaction of the surface of silicon wafers with focused ion beams (FIB) and fluoride plasma are carried out. The general regularities of the influence of the FIB and plasma-chemical etching (PCE) modes on the etching rate, surface roughness, and the angle of inclination of the structure walls are determined, and the manifestation of activation and masking effects during the PCE of a silicon surface locally modified by FIB is established. It is found that, in the case of the masking effect, the selectivity is 195.26, and the rate of formation of structures by the combination of FIB and PCE methods is 3.23 nm/s. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink