A picowatt, 3.88 ppm/°C, 0.011%/V subthreshold CMOS voltage reference biased by GSCC current source.

Autor: Zhang, Yuxin, Cai, Jueping, Li, Xinyu, Zhang, Yizhen, Li, Dengchao
Předmět:
Zdroj: Analog Integrated Circuits & Signal Processing; Jul2022, Vol. 112 Issue 1, p1-11, 11p
Abstrakt: This paper presents a picowatt-level power consumption CMOS voltage reference which is appropriate for low power applications. A gate-to-source connected cascode current source which is consisted of two transistors operating in the subthreshold region is used to generate bias current of proposed voltage reference, so resistors and MOSFETs operating in deep triode region are saved. The proposed circuit is implemented in the standard 0.18-um process. Simulation results of proposed voltage reference show that the minimum supply voltage is 0.45 V, consuming only 83pW at room temperature. The value of proposed voltage reference is 209.2 mV and temperature coefficient is 3.88 ppm/°C with a temperature range of −20–125 °C. PSR of proposed voltage reference is −65.54 dB at 100 Hz, and the LS is reduced to 0.011%/V by utilizing the cascode structure when the supply voltage changes from 0.45 to 1.8 V. In addition, the active area is only 0.0029 mm2. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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