| Autor: |
Eshkevar Vakili, Aref, Bregoli, Matteo, Ceriani, Silvia, Bassetti, Daniel, Ficorella, Francesco, Pancheri, Lucio, Bringer, Charlotte |
| Zdroj: |
CEAS Space Journal; Apr2022, Vol. 14 Issue 2, p263-285, 23p |
| Abstrakt: |
One of the aspects that semiconductor devices have to cope with in space applications is radiation induced damage. Therefore, radiation hardness studies are crucial for the space missions and a comprehensive on-ground testing of the components needs to be performed aiming at identifying the most radiation tolerant technologies. This paper reports the test results on newly designed and fabricated 8-channel silicon phototransistors arrays, their performance against various layouts designs, and process implementations, and discusses the achieved reliability after exposure to gamma rays, protons radiations, and high-temperature storage at wafer level in the framework of Optoi's aerospace activities. This work was funded by the European Space Agency. The results also represent a complementary analysis aimed at better understanding and interpreting the outcomes of the non-packaged devices. In conclusion, the best combination of design parameters proving the most robust with respect to the others could be selected, being considered satisfactory and acceptable for the next phase of component assessment. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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