| Autor: |
Zhu, Xiaohua, Shao, Siwu, Chang, Yuhao, Zhang, Runming, Chung, Sylvia Yuk Yee, Fu, Yu, Bi, Te, Huang, Yabo, An, Kang, Liu, Jinlong, Li, Chengming, Kawarada, Hiroshi |
| Předmět: |
|
| Zdroj: |
IEEE Electron Device Letters; May2022, Vol. 43 Issue 5, p789-792, 4p |
| Abstrakt: |
This letter reports a high drain current density and normally-off operation metal-oxide-semiconductor field-effect transistors (MOSFETs) with a gate insulator of 100 nm-Al2O3. A heavily boron-doped layer as the source/drain region was deposited on a (110) polycrystalline diamond substrate to achieve a low ohmic contact resistance. The MOSFETs demonstrate a maximum current density of −400 mA mm $^{-{1}}$ normalized by gate width and a maximum current density of $- 2000\,\,\mu \text{m}$ mA mm−1 normalized by gate length and gate width, which are the highest values for normally-off diamond FETs. The Grain boundaries (GBs) and the nitrogen impurities ($\sim {3}\,\,\times \,\,{10}^{{17}}$ cm $^{-{3}}$) as ionized donors in the channel region caused the threshold voltage (${V}_{\text {th}}$) to shift in the negative direction, exhibiting normally-off characteristics. This technique provides a promising method to achieve high-performance diamond devices, and help improve safety and save energy in switching systems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
