Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model.

Autor:	Chuan, Mu Wen, Riyadi, Munawar Agus, Hamzah, Afiq, Alias, Nurul Ezaila, Mohamed Sultan, Suhana, Lim, Cheng Siong, Tan, Michael Loong Peng
Předmět:	FIELD-effect transistors MOORE'S law CINNAMON TRANSISTORS METAL oxide semiconductor field-effect transistors NANOELECTRONICS
Zdroj:	PLoS ONE; 3/3/2022, Vol. 17 Issue 3, p1-11, 11p
Abstrakt:	Moore's Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed p-type silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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