| Autor: |
Ding, Jia, Campbell, Calli M., Becker, Jacob J., Tsai, Cheng-Ying, Schaefer, Stephen T., McCarthy, Tyler T., Boccard, Mathieu, Holman, Zachary C., Zhang, Yong-Hang |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/14/2022, Vol. 131 Issue 2, p1-7, 7p |
| Abstrakt: |
Monocrystalline 1.7 eV Mg0.13Cd0.87Te/MgxCd1−xTe (x > 0.13) double heterostructure (DH) solar cells with varying Mg compositions in the barrier layers are grown by molecular beam epitaxy. A Mg0.13Cd0.87Te/Mg0.37Cd0.63Te DH solar cell featuring abrupt interfaces between barriers and absorber and the addition of a SiO2 anti-reflective coating demonstrate open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), and device active-area efficiencies up to 1.129 V, 17.3 mA/cm2, 77.7%, and 15.2%, respectively. The VOC and FF vary oppositely with the MgxCd1−xTe barrier height, indicating an optimal design of the MgCdTe DHs as a trade-off between carrier confinement and carrier transport. Temperature-dependent VOC measurements reveal that the majority of carrier recombination in the devices occurs outside the DHs, in the a-Si:H hole-contact layer, and at the interface between the a-Si:H layer and the MgxCd1−xTe top barrier at room temperature. Simulation results for the device with the highest efficiency show that the p-type a-Si:H layer and the Mg0.37Cd0.63Te top barrier contribute 1.3 and 2.4 mA/cm2JSC loss, respectively. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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