| Autor: |
Popov, Vladimir P., Tarkov, Sergey M., Tikhonenko, Fedor V., Antonov, Valentin A., Tyschenko, Ida E., Simakin, Sergey G., Rudenko, Konstantin V. |
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| Zdroj: |
Physica Status Solidi. A: Applications & Materials Science; Dec2021, Vol. 218 Issue 23, p1-7, 7p |
| Abstrakt: |
Using nanoscale inclusions of a wide‐band SiC semiconductor and SiO2 dielectric formed in CO+ molecular ion‐implanted (COII) layers allows creating highly resistive regions inside a moderate‐doped silicon substrate. Contrary to the well‐known implanted proton or argon‐ion insulation, where the high resistance is provided by the unstable radiation defect Fermi‐level pinning, such two‐type antidots form a bend of the silicon bandgap on the heteroboundaries around them, similar to the insulating layer in the p−n junction, and guarantee the absence of mobile charge carrier transport at a certain concentration of antidots and working temperatures below 400 K. These insulating regions save their properties even after hard thermal treatment (1400 K). Moreover, a gas blistering suppression is observed for the silicon‐on‐insulator (SOI) wafers with an ultrathin (10–40 nm) buried oxide (BOX). SIMS measurements demonstrate the strong mobile impurity accumulation at the COII region during subsequent thermal treatments. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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