| Autor: |
Sun, Keyao, Raszmann, Emma, Wang, Jun, Lin, Xiang, Burgos, Rolando, Dong, Dong, Boroyevich, Dushan |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Power Electronics; Jan2022, Vol. 37 Issue 1, p534-546, 13p |
| Abstrakt: |
Series connection of SiC MOSFETs provides an effective alternative to achieving higher blocking voltage with simpler circuit topologies. However, the voltage imbalance during the switching transient remains a critical issue. Recently, an active $\mathrm{\text{} d }v/\mathrm{\text{} d }t$ control approach utilizing a controllable equivalent Miller capacitor has been proved to be an effective, low-loss, and compact solution. This article renders an improved control circuit with comprehensive modeling and analysis. First, the original circuit is modified with an additional bipolar-junction-transistor and pulsed control signal so that the external capacitor can be fully reset every switching cycle. Second, a simplified model of the active $\mathrm{\text{} d }v/\mathrm{\text{} d }t$ control is derived to unveil the linear correlation between the control voltage and the device $\mathrm{\text{} d }v/\mathrm{\text{} d }t$ during the turn-off transient. Third, a feedback control model is described by difference equations for stability analysis, offering parameter selection guidelines for the control process. Fourth, experimental results with two series-connected SiC MOSFETs under 1.5-kV dc-link voltage are demonstrated to validate the open-loop control model and closed-loop stability. Finally, the control method is expanded to eight series-connected devices under 6 kV to prove its scalability and potential for medium-voltage high-current applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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