X-Ray Reflectometry Study of the State of the Surface Layer of Polished Silicon Substrates Depending on the Methods of Their Cleaning.

Autor: Volkovsky, Yu. A., Seregin, A. Yu., Folomeshkin, M. S., Prosekov, P. A., Pavlyuk, M. D., Pisarevsky, Yu. V., Blagov, A. E., Kovalchuk, M. V.
Zdroj: Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Sep2021, Vol. 15 Issue 5, p927-933, 7p
Abstrakt: The state of the surface layer of polished silicon substrates and the effect of surface-cleaning procedures, such as washing in an ultrasonic bath, etching, and vacuum annealing, is studied. The X-ray reflectivity technique is used to determine the root-mean-square (rms) roughness, thickness, and density of the damaged surface layer. It is shown that the substrates have a damaged surface layer 1.5 nm thick, which is most pronounced after annealing at 350°С. Based on the etching procedures and subsequent vacuum annealing, an approach is proposed for cleaning the surface from contaminants, the damaged layer, and obtaining substrates with a root-mean-square roughness of σz = 0.42 nm. This approach can be used, in particular, for the deposition of thin organic films. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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