Photoluminescence and Stability of Sputtered SiOx Layers.

Autor: Hosseini-Saber, Seyed Mohammad Ali, Muydinov, Ruslan, Ahmadi, Najme, Ibaceta-Jaña, Josefa, Kazemi, Zainab, Seeger, Stefan, Gundlach, Heiko, Gernert, Ulrich, Szyszka, Bernd, Eichler, Hans Joachim
Předmět:
Zdroj: Physica Status Solidi. A: Applications & Materials Science; Oct2021, Vol. 218 Issue 20, p1-7, 7p
Abstrakt: SiOx layers with thicknesses of about 300–1000 nm are produced by sputtering silicon onto glass and quartz substrates. Silicon is oxidized during deposition, and the refractive index of the sputtered layers vary from 1.63 to 1.86. Oxygen atomic concentration in SiOx is in the range of 1
Databáze: Complementary Index