| Autor: |
Ingle, Nikesh N., Shirsat, Sumedh, Sayyad, Pasha, Bodkhe, Gajanan, Patil, Harshada, Deshmukh, Megha, Mahadik, Manasi, Singh, Fouran, Shirsat, Mahendra |
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| Zdroj: |
Journal of Materials Science: Materials in Electronics; Jul2021, Vol. 32 Issue 14, p18657-18668, 12p |
| Abstrakt: |
Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-Ni3HHTP2 MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of Ni3HHTP2-MOF were synthesized by chemical method and exposed to C12+ ions irradiation with fluence 1 × 1011 ion/cm2 and 1 × 1012 ion/cm2. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc's plot. The synthesized nanorods of Ni3HHTP2 MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/SiO2) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/SiO2) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties and sensing properties. After Swift Heavy Ion (SHI) irradiation (1 × 1011 ion/cm2), it shows excellent response and recovery time i.e., 20 and 23 s, respectively, for 1 ppm SO2 concentration at room temp (RT) with a lower detection limit of 0.625 ppm. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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