Effect of Trench Isolation on the Self-heating Phenomenon in Advanced Radio Frequency SiGe Heterojunction Bipolar Transistor.

Autor:	Kherief, N., Latreche, S., Lakhdara, M., Boulgheb, A., Gontrand, C.
Předmět:	HETEROJUNCTION bipolar transistors RADIO frequency TRANSISTORS TRENCHES HETEROJUNCTIONS JUNCTION transistors HEAT transfer
Zdroj:	Journal of Nano- & Electronic Physics; 2021, Vol. 13 Issue 1, p01021-1-01021-5, 5p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu