Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics.

Autor: Abernathy, Grey, Zhou, Yiyin, Ojo, Solomon, Alharthi, Bader, Grant, Perry C., Du, Wei, Margetis, Joe, Tolle, John, Kuchuk, Andrian, Li, Baohua, Yu, Shui-Qing
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Zdroj: Journal of Applied Physics; 3/7/2021, Vol. 129 Issue 9, p1-13, 13p
Abstrakt: Recent progress on (Si)GeSn optoelectronic devices holds great promise for photonic integration on Si substrates. In parallel to the development of bulk devices, (Si)GeSn-based quantum wells (QWs) have been investigated, aiming to improve device performance. While multiple QW structures are preferred for the device applications, a single quantum well (SQW) is more suitable for optical property studies. In this work, a comprehensive study of an SiGeSn/GeSn SQW was conducted. The calculated band diagram provided band alignment and energies of possible transitions. This SQW features a direct bandgap well with L–Γ valley energy separation of 50 meV, and barrier heights for both electron and hole are greater than 80 meV. Using two continuous-wave and two pulsed pumping lasers, the analysis of PL spectra allows for identifying different transitions and a better understanding of the SQW optical properties. This study could provide guidance for advancing the future QW design toward device applications. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index