S/D Engineering for Sub-100 nm MOSFET using Ultra Shallow Junction Formation Technique, Elevated S/D Structure and SALICIDE Technique.
| Autor: | Ohuchi, Kazuya, Adachi, Kanna, Hokazono, Akira, Toyoshima, Yoshiaki |
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| Zdroj: | MRS Online Proceedings Library; 2002, Vol. 717 Issue 1, p1-12, 12p |
| Databáze: | Complementary Index |
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