Effect of TaN Stoichiometry on Barrier Oxidation and Defect Density in 32nm Cu/Ultra-Low K Interconnects.

Autor: Simon, Andrew H., Baumann, Frieder, Bolom, Tibor, Park, Jong Guk, Child, Craig, Kim, Ben, DeHaven, Patrick, Davis, Robert, Ogunsola, Oluwafemi, Angyal, Matthew
Zdroj: MRS Online Proceedings Library; 2010, Vol. 1249 Issue 1, p1-6, 6p
Databáze: Complementary Index
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