Technology of Nanosized Metal Layers for Forming a Reliable Contact to the Drain Area of Silicon Transistors.

Autor:	Ismailov, T. A., Shakhmaeva, A. R., Shangereeva, B. A.
Předmět:	METALWORK SILICON crystals SOLDER & soldering SILICON CRYSTALS
Zdroj:	Russian Microelectronics; 2020, Vol. 49 Issue 6, p385-388, 4p
Abstrakt:	The technology of mounting a crystal of a semiconductor device is described. The technology of soldering in mounting a crystal of a semiconductor device is presented. The question of using lead solders for soldering silicon crystals is considered. Methods for the formation of multilayer metallization of the reverse side of the crystal are considered and the optimal technology is selected. The parameters of the reliability of the crystal's connection to the transistor's case are checked. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink