| Abstrakt: |
In this study, a scalable GaN HEMT large-signal model for 140-W power devices is presented. The large-signal model of an 80-finger GaN HEMT includes eight unit device models in parallel, and the large-signal model of the unit device is based on the AMCAD–FET model. The unit device includes a 10-finger GaN HEMT, a gate pad, and a drain pad. Parameters for the unit GaN HEMT model were extracted using an IVCAD program of AMCAD and a Keysight PNA-X network analyzer. The unit GaN HEMT model was verified through on-wafer load-pull measurements, and the large-signal GaN HEMT model of the large-sized 80-finger device was verified through load-pull measurements of the packaged device. [ABSTRACT FROM AUTHOR] |
