1300°C Annealing of 1 × 1020 cm-3 Al+ Ion Implanted 3C-SiC/Si.
| Autor: | Nipoti, Roberta, Canino, Mariaconcetta, Zielinski, Marcin, Torregrosa, Frank, Camera, Alberto |
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| Zdroj: | ECS Journal of Solid State Science & Technology; 2019, Vol. 8 Issue 9, pP480-P487, 8p |
| Databáze: | Complementary Index |
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