| Autor: |
Georgieva, M. T., Telling, N. D., Grundy, P. J., Faunce, C. A., Jones, G. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/2004, Vol. 96 Issue 5, p2923-2926, 4p, 1 Black and White Photograph, 1 Chart, 2 Graphs |
| Abstrakt: |
The effect of N-doping on the microstructure and magnetic properties of thin Fe layers has been employed to construct all Fe-electrode magnetic tunnel junctions that displayed the tunneling magnetoresistance (TMR) effect. Using low nitrogen doses, a reduction in coercivity was achieved due to grain refinement, without a concurrent decrease in the saturation magnetization of the Fe films caused by the formation of crystalline iron nitride phases. It was demonstrated that this N-induced grain refinement can be applied beneficially to control the switching field of the “free” layer in magnetic trilayer structures. In general the ability to control magnetic softness without reducing saturation magnetization will prove important for incorporating high spin-polarized materials into spin valves and TMR devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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