| Autor: |
구현지, 홍영표, 이승경, 홍성철, 김완식, 김소수 |
| Předmět: |
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| Zdroj: |
Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji; Dec2019, Vol. 30 Issue 12, p934-944, 11p |
| Abstrakt: |
In this study, we propose a method for improving the accuracy of the characteristic impedance extraction method of line standards when using multiline thru-reflect-line(mTRL) calibration on chips based on the propagation constant method. This method uses a substrate with corrected dielectric properties to obtain a result that is close to the value of the measured propagation constant, which is obtained by mTRL calibration without using basic substrate information when determining the capacitance per unit length using electromagnetic simulation. We observed a slight improvement in the accuracy of the proposed method. This improvement was verified by comparing the results with a commercial off-chip impedance standard in a low-frequency band. In addition, we compared the method of obtaining the characteristic impedance only with the electromagnetic simulation results and demonstrated the accuracy limit of the low-frequency band using this method. Finally, the intrinsic characteristics of transistors were determined using a fabricated complementary metal-oxide-semiconductor transistor. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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