| Autor: |
Suzuki, Keijiro, Namiki, Shu, Kawashima, Hitoshi, Ikeda, Kazuhiro, Konoike, Ryotaro, Yokoyama, Nobuyuki, Seki, Miyoshi, Ohtsuka, Minoru, Saitoh, Shigeru, Suda, Satoshi, Matsuura, Hiroyuki, Yamada, Koji |
| Zdroj: |
Journal of Lightwave Technology; 1/15/2020, Vol. 38 Issue 2, p226-232, 7p |
| Abstrakt: |
We fabricate and characterize a polarization-diversity 32 × 32 silicon photonics switch by newly introducing SiN overpass waveguides onto our nonduplicate polarization-diversity path-independent insertion-loss switch. The SiN overpass waveguides are used to simplify the optical paths with a uniform path length between the edge couplers and the switch matrix and significantly reduce the number of waveguide intersections. The switch chip is fabricated using a 300-mm silicon-on-insulator wafer pilot line. The fabricated switch comprises more than 7,600 components, making this the largest ever complementary-metal-oxide-semiconductor-based silicon photonics circuit. The switch chip is electrically and optically packaged and evaluated for a sampled port connection with 32 paths, with an average on-chip loss of ∼35 dB and an average polarization-dependent loss of 3.2 dB where 75% of the measured paths exhibit a loss of less than 3 dB. The differential group delay is measured to be 1.7 ps. The performance can be further improved by optimizing the device design. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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