Magnetic properties and spin-orbit-torque-induced magnetization switching in Ta/MnGa grown on Cr and NiAl buffer layers.

Autor:	Yamanouchi, Michihiko, Bao, Nguyen Viet, Shimohashi, Fumiaki, Jono, Kohey, Inoue, Masaki, Uemura, Tetsuya
Předmět:	BUFFER layers MAGNETIC properties MAGNETIZATION MAGNETIC fields TANTALUM HYSTERESIS loop SPIN-orbit interactions MAGNETIZATION reversal
Zdroj:	AIP Advances; Dec2019, Vol. 9 Issue 12, p1-4, 4p
Abstrakt:	We investigate the magnetic properties and spin-orbit-torque-induced (SOT-induced) magnetization switching in Ta/MnGa/Cr and Ta/MnGa/NiAl structures. Out-of-plane hysteresis loops for the Ta/MnGa/Cr (NiAl) structures are skewed (square). In-plane currents I are applied to Hall devices made of structures exposed to in-plane magnetic fields Hin along the channel direction. Clear asymmetric magnetization switching with respect to the polarity of I and Hin is detected for the Ta/MnGa/NiAl device. Similar asymmetric magnetization switching is observed for the Ta/MnGa/Cr device, although the magnetization is partially switched regardless of the polarity of I and Hin. These results suggest that an in-plane magnetization component opposite to Hin is present in the Cr-buffer structure and that the formation of such a component is suppressed in the NiAl-buffer structure. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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