| Autor: |
Neudeck, Philip G., Spry, David J., Krasowski, Michael J., Prokop, Norman F., Beheim, Glenn M., Liang-Yu Chen, Chang, Carl W. |
| Předmět: |
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| Zdroj: |
Journal of Microelectronic & Electronic Packaging; Oct2018, Vol. 15 Issue 4, p163-170, 8p |
| Abstrakt: |
This work describes recent progress in the design, processing, and testing of significantly up-scaled complex 500°C- durable 4H-SiC junction field effect transistor (JFET) integrated circuit (IC) technology with two-level interconnect undergoing development atNASAGlenn Research Center. For the first time, stable electrical operation of semiconductor ICs for more than 1 y at 500°C in an air atmosphere is reported. These groundbreaking durability results were attained on two-level interconnect JFET demonstration ICs with 175 or more transistors on each chip. This corresponds to a more than 7-fold increase in 500°C-durable circuit complexity from the 24-transistor ring oscillator ICs reported at HiTEC 2016. These results advance the technology foundation for realizing long-term durable 500°C ICs with increased functional capability for combustion engine sensing and control, planetary exploration, deep-well drilling monitoring, and other harshenvironment applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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