| Autor: |
Dagata, J. A., Perez-Murano, F., Martin, C., Kuramochi, H., Yokoyama, H. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 8/15/2004, Vol. 96 Issue 4, p2393-2399, 7p, 1 Diagram, 8 Graphs |
| Abstrakt: |
A comprehensive analysis of the electrical current passing through the tip-substrate junction during oxidation of silicon by scanning probe microscopy (SPM) is presented. This analysis identifies the electronic and ionic contributions to the total current, especially at the initial stages of the reaction, determines the effective contact area of the tip-substrate junction, and unifies the roles of space charge and meniscus formation. In this work, we concentrate on noncontact SPM oxidation. We analyze simultaneous force-distance and current-distance curves to demonstrate that total current flow during noncontact oxidation is significantly less for noncontact mode than for contact oxidation, although the resulting oxide volume is nearly identical. Ionization of water layers and mobile charge reorganization prior to and following meniscus formation is also shown to alter the tip-substrate capacitance and, therefore, the bending of the SPM cantilever. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
