| Autor: |
Huang, G. S., Wu, X. L., Mei, Y. F., Chen, P., Chu, Paul K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/2004, Vol. 96 Issue 3, p1443-1446, 4p, 1 Black and White Photograph, 3 Graphs |
| Abstrakt: |
We have investigated the photoluminescence spectra of silicon-based nanoscale SiO2 islands obtained by anodization of silicon-based aluminum membranes in a 0.3m sulfuric acid solution under a constant voltage of 25 V. Two ultraviolet emission bands were observed at 290 and 370 nm. After annealing the samples in 900 °C in O2, the 290 nm band vanishes, but the 370 nm band still exists. We suggest that the 290 nm band originates from optical transition in the E′ centers in the SiO2 islands according to its annealing behavior. The 370 nm band is considered to be from Al-related luminescence centers, [AlO4]0, because a decrease of intensity of the 370 nm band is in agreement with that of amount of the Al ion impurities located in the SiO2 islands. This work shows a clear understanding of the light-emitting mechanism of silicon-based SiO2 island array. The obtained result can be expected to have important applications in modem optoelectronics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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